Diodes Incorporated has announced the introduction of its first MOSFETs to be housed in the miniature DFN1212-3 package. Diodes Incorporated has announced the introduction of its first MOSFETs to be ...
TOKYO--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (TDSC) today announced the launch of “SSM3K357R,” a new MOSFET that adopts an active-clamp structure with a built-in diode ...
Infineon Technologies Inc. has introduced its 650-V CoolSiC MOSFET in TO leadless (TOLL) packaging, which is designed to optimize performance and reliability for a variety of applications, including ...
Vishay Intertechnology says its 30-V asymmetric dual-TrenchFET power MOSFET, housed in the PowerPAIR 3- by 3-mm package, offers 57% lower on-resistance, up to 25% higher power density, and 5% higher ...
SemiQ Inc. has released its QSiC 1,200-V third-generation silicon-carbide (SiC) MOSFET that shrinks the die size while improving switching speeds and efficiency. The device is 20% smaller compared to ...
Field-effect transistors (FETs) — three-terminal systems consisting of source, drain and gate electrodes — are integral in many electronic devices, allowing them to achieve energy-efficient high-speed ...
Optimized for high bus voltage applications, these devices are designed to handle bus voltages exceeding 1000V. The power pins of the series are thickened to 2mm, enabling the devices to carry higher ...
Over the recent weeks here at Hackaday, we’ve been taking a look at the humble transistor. In a series whose impetus came from a friend musing upon his students arriving with highly developed ...
ARLINGTON, Va.--(BUSINESS WIRE)--Cobham Advanced Electronic Solutions (CAES), a leading provider of mission critical electronic solutions, today announced the appointment of Stephen Sartwell as the ...
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