Infineon Technologies is to develop a two-terminal semiconductor device that acts as a circuit breaker for hundreds of volts and amps: doubling the performance of its mains-voltage super-junction ...
The "UnitedSiC UJN1205K 1200V SiC JFET Complete Teardown Report" report has been added to ResearchAndMarkets.com's offering. This report presents a deep technology analysis of the UJN1205K device, ...
Hitachi has developed a SiC-based ‘TED-MOS’ (Trench-Etched-Double-Diffused MOS) device using a fin-structured trench MOSFET based on the conventional DMOS-FET. An energy saving of 50% over a DMOS-FET ...
Wide bandgap semiconductors have proven to be more profitable and effective than traditional silicon-based semiconductors in the electronic instrument industry. Wide bandgap silicon carbide (SiC) ...
Each new generation of microprocessors has seen the integration of a larger number of transistors operating at higher clock frequencies with the goal of enabling higher performance in computing and ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results