Gallium nitride (GaN)-based high electron mobility transistors (HEMTs) are a type of field-effect transistors (FETs) designed to operate at very high frequencies with low noise. As such, they have ...
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Pictured is an RF magnetron sputtering system, one of the deposition tools used to make the films in this study. Credit must be given to the creator. Only noncommercial uses of the work are permitted.
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