Atomic layer deposition (ALD) originated from atomic layer epitaxy, which was introduced in 1970 and initially used in electroluminescent displays. It rapidly revolutionized semiconducting ...

A pathway for ALD-enhanced materials to be quickly developed and transitioned from lab-scale to commercial production is available for almost any application, for the first time ever. Atomic-level ...

Anna Demming discovers why the vacuum-based technique of atomic-layer deposition – a variant of chemical-vapour deposition – holds so much promise for energy and environmental applications Greener ...

A research team, led by Professor Joonki Suh in the Department of Materials Science and Engineering and the Graduate School of Semiconductor Materials and Devices Engineering at UNIST, has made a ...

Researchers identified 2.5 nanometers as the minimum coating thickness that suppresses side reactions in sulfide solid-state ...

Forge Nano’s TEPHRA™ platform is designed to deliver high-throughput ALD processing capabilities with precise film uniformity and scalable manufacturing performance for advanced semiconductor ...

Beneq Oy, the home of atomic layer deposition (ALD), today announced the appointment of Dr. Jason Harrison as Chief Executive Officer. Dr. Harrison succeeds Dr. Tommi Vainio and will lead Beneq into ...

In this interview, discover how ATLANT 3D's DALP technology is revolutionizing thin-film deposition, enabling rapid prototyping and advanced material applications in nanofabrication. Can you please ...