Great efforts have been made to improve power switches – MOSFETs and IGBTs – to decrease forward voltage drop and as well as to decrease turn-off energy. In switching inductive loads, the turn-on ...

This PIN diode rf switch is the ideal antenna switch for VHF and UHF and work with the PIN diodes which are special high frequency switching diodes with very low internal capacitance. The internal ...

PLANO, Texas--(BUSINESS WIRE)--Diodes Incorporated (Nasdaq: DIOD) today announced the PI3WVR648GEAEX five-lane MIPI 2:1 switch, capable of switching physical layers that comply with either C-PHY or ...

Diodes Incorporated has introduced the DLLFSD01x series of switching diodes, aimed at designers who require ultra-low leakage and super-fast switching speeds. The diodes are suited for used in LCD ...

CHICAGO--(BUSINESS WIRE)--Littelfuse, Inc., the global leader in circuit protection, has added a series of silicon Schottky devices designed for ultra-low forward voltage drop (V F) to its rapidly ...

Diodes Incorporated has announced the introduction of the AP22913, a 2A single-channel, slew-rate-controlled load switch with true reverse current blocking for high-side load-switching applications.

Diodes has created a high-speed double-pole double-throw analogue switch that can be used as a multiplexer or de-multiplexer at over 5GHz. To be known as PSMUX136, it supports a supply of 1.8 to 5.5V, ...

When looking across the discrete components in your electronic armory, it is easy to overlook the humble diode. After all, one can be forgiven for the conclusion that the everyday version of this ...

Diodes has introduced the AP22913, a 2.0A single-channel, slew-rate-controlled load switch with true reverse current blocking (TRCB) for high-side load-switching applications. Single-channel high-side ...

With the increasing demand for improving system efficiencies, the development of the low loss, high current, high voltage, rugged power modules for high frequency power electronic applications is of ...

A glass substrate was first cleaned with acetone, methanol and deionized water for 5 min each. A transparent ITO electrode was deposited onto the cleaned substrate using a DC sputtering system.