SemiQ Inc, a developer of SiC devices has announced a family of 1700 V SiC MOSFETs designed to meet the needs of ...

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Engineers from Eindhoven University of Technology are claiming to have set a new benchmark for the performance of InP ...

Thorlabs has acquired Praevium Research, a developer of high-speed tuneable VCSELs. The two organisations have been working ...

Researchers at Shandong University in China have reported an enhancement-mode P-GaN/AlGaN/GaN metal-insulator-semiconductor ...

This design enables a narrow linewidth (typically 20 MHz at 450 nm) and wavelength precision. Additionally, the lasers ...

Building on recent achievements at an emission wavelength of 450 nm, Swiss company Exalos has announced narrow-linewidth DFB ...

The Vermont Gallium Nitride (V-GaN) Tech Hub — a consortium led by the University of Vermont (UVM) and including ...

Electrical measurements on these diodes revealed that increasing their temperature from ambient to 573K produces a fall in ...

Guerrilla RF has released the first in a new class of GaN-on-SiC HEMT power amplifiers being developed by the company.

The bilateral funding from Innovate UK and Innosuisse will support the two-year QDHIGHSWIR research project into overcoming ...

Fraunhofer ISE and partners have developed a SiC-based medium voltage system technology for fast charging stations that will ...