The research work aims to use the superior properties of wide bandgap (WBG) semiconductors, SIC and GaN, by proposing and ...

A new R&D development designed to support the growth of semiconductor packaging has received a £9 million funding injection, ...

EPC continues to benefit from a ruling by the US ITC a couple of months ago, which previously confirmed that Innoscience ...

GaN specialist Efficient Power Conversion (EPC) has introduced the EPC2367, a next-generation 100 V eGaN FET for power ...

Taiwan Semiconductor (TSC) has expanded its PerFET family of power MOSFETs with the addition of 80V and 100V versions. Based ...

Texas Instruments (TI) has announced new power chips to support the rapidly growing power needs of modern data centres, which ...

Nexperia has introduced a range of industrial grade 1200 V SiC MOSFETs in surface-mount (SMD) top-side cooled packaging ...

With more than six billion units sold around the world, TinySwitch ICs are widely used in bias and auxiliary supplies in ...

Researchers from the National Renewable Energy Laboratory (NREL), the Colorado School of Mines, and Oak Ridge National ...

Navitas Semiconductor has announced what it believes are the world’s first production-released 650 V bi-directional GaNFast ...

Infineon has expanded its CoolSiC Schottky diode 2000V G5 product family to include a Schottky diode in the TO-247-2 package, ...

Toshiba Electronics Europe GmbH has begun mass production of the AEC-Q100 qualified TB9103FTG MOSFET gate driver IC, featured ...