Vishay Intertechnology has introduced a new Gen 4.5 650 V E Series power MOSFET that delivers high efficiency and power density for telecom, industrial, and computing applications ...

The team from Wisconsin-Madison claims to be the first to break the 2 kV barrier for monolithic bidirectional GaN HEMTs, with ...

The dedicated semiconductor design centre, which has received £2.5m in Welsh Government investment, funding from Cadence, and ...

The 4-level converter operates over a wide range input from 4.5V to 18V covering USB and wireless charging standards. Current ...

Pulsiv, the UK power electronics innovator has won the PSMA's (Power Sources Manufacturers Association) first Global Energy Efficiency Award. The goal of the award was to recognise a "world ...

A new R&D development designed to support the growth of semiconductor packaging has received a £9 million funding injection, ...

The research work aims to use the superior properties of wide bandgap (WBG) semiconductors, SIC and GaN, by proposing and ...

EPC continues to benefit from a ruling by the US ITC a couple of months ago, which previously confirmed that Innoscience ...

Ted Pawela, VP, Head of Customer Success at Renesas, introduces the Renesas 365, Powered by Altium, platform, which promises ...

Andy Nightingale, Vice President Product Management & Marketing at Arteris, discusses exciting developments at the company: the launch of FlexGen, smart network-on-chip IP accelerating chip design by ...