Ted Pawela, VP, Head of Customer Success at Renesas, introduces the Renesas 365, Powered by Altium, platform, which promises ...

The research work aims to use the superior properties of wide bandgap (WBG) semiconductors, SIC and GaN, by proposing and ...

A new R&D development designed to support the growth of semiconductor packaging has received a £9 million funding injection, ...

EPC continues to benefit from a ruling by the US ITC a couple of months ago, which previously confirmed that Innoscience ...

GaN specialist Efficient Power Conversion (EPC) has introduced the EPC2367, a next-generation 100 V eGaN FET for power ...

Texas Instruments (TI) has announced new power chips to support the rapidly growing power needs of modern data centres, which ...

With more than six billion units sold around the world, TinySwitch ICs are widely used in bias and auxiliary supplies in ...

Taiwan Semiconductor (TSC) has expanded its PerFET family of power MOSFETs with the addition of 80V and 100V versions. Based ...

Nexperia has introduced a range of industrial grade 1200 V SiC MOSFETs in surface-mount (SMD) top-side cooled packaging ...

The latest additions to Nexperia’s e-mode GaN FET portfolio include new low voltage 40 V bi-directional devices (RDSon<12 mΩ) to support overvoltage protection (OVP), load switching, and low-voltage ...

The OptiMOS TDM2454xx modules are a fusion of Infineon's robust OptiMOS 6 trench technology, chip-embedded package for superior electrical and thermal efficiencies, and innovative low-profile magnetic ...

By using the 600 V CoolMOS 8 SJ, Enphase is able to significantly reduce MOSFET resistance (R DS (on)) for its solar inverter systems, leading to lower conduction losses, which improves overall device ...